Who knows the cleaning method of silicon wafer ultrasonic cleaning machine?

There are three types of physical cleaning:

1.Scrub or scrub: can remove particle pollution and most of the film stuck on the film.

2.High pressure cleaning: it is to spray the surface of the sheet with liquid, and the pressure of the nozzle is up to several hundred atmospheres. High pressure cleaning by jet action, film is not easy to produce scratches and damage. However, high pressure injection will produce electrostatic effect, which can be avoided by adjusting the distance and Angle from the nozzle to the film or adding antistatic agent.

Ultrasonic cleaning: ultrasonic sound energy into the solution, by cavitation to wash off the pollution on the wafers. However, it is more difficult to remove particles smaller than 1 micron from graphed wafers. If the frequency is increased to uHF, the cleaning effect is better.

Chemical cleaning: in order to remove atomic, ion invisible pollution, there are more methods, solvent extraction, pickling (sulfuric acid, nitric acid, aqua aqua, a variety of mixed acids, etc.) and plasma method. The hydrogen peroxide system cleaning method has good effect and little environmental pollution.